View IRG4PC50KD_314418.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD -91582B
IRG4PC50KD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
q
C
Short Circuit Rated UltraFast IGBT
VCES = 600V VCE(on) typ. = 1.84V
q q
q q q q
Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz, and Short Circuit Rated to 10s @125C, VGE = 15V Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft recovery anti-parallel diodes for use in bridge configurations Industry standard TO-247AC package Generation 4 IGBTs offer highest efficiencies available HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs Parameter
G E
@VGE = 15V, IC = 30A
n -c h a n n e l
Benefits
Absolute Maximum Ratings
Max.
600 52 30 104 104 25 280 10 20 200 78 -55 to +150 VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM tsc VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw.
TO-247AC
Units
V
A
s V W
C 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m)
Thermal Resistance
Parameter
RqJC RqJC RqCS RqJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
-- -- -- -- --
Typ.
-- -- 0.24 -- 6 (0.21)
Max.
0.64 0.83 -- 40 --
Units
C/W
g (oz)
www.irf.com
1
12/3/98
IRG4PC50KD
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)CES
DV(BR)CES/DTJ
VCE(on)
Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage
VGE(th) DVGE(th)/DTJ gfe ICES VFM IGES
Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current
Min. 600 -- -- -- -- 3.0 -- 17 -- -- -- -- --
Typ. -- 0.47 1.84 2.19 1.79 -- -12 24 -- -- 1.3 1.2 --
Max. Units Conditions -- V VGE = 0V, IC = 250A -- V/C VGE = 0V, IC = 1.0mA 2.2 IC = 30A VGE = 15V -- V IC = 52A see figures 2, 5 -- IC = 25A, TJ = 150C 6.0 VCE = VGE, IC = 250A -- mV/C V CE = VGE, IC = 250A -- S VCE = 100V, IC = 30A 250 A VGE = 0V, VCE = 600V 6500 VGE = 0V, VCE = 600V, TJ = 150C 1.7 V IC = 25A see figure 13 1.5 IC = 25A, TJ = 150C 100 nA VGE = 20V
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. -- -- -- -- -- -- -- -- -- -- 10 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 200 25 85 63 49 150 95 1.61 0.84 2.45 -- 61 46 310 170 3.53 13 3200 370 95 50 105 4.5 8.0 112 420 250 160 Max. Units Conditions 300 IC = 30A 38 nC VCC = 400V see figure 8 127 VGE = 15V -- -- TJ = 25C ns 220 IC = 30A, VCC = 480V 140 VGE = 15V, RG = 5.0W -- Energy losses include "tail" -- mJ and diode reverse recovery 3.0see figures 9,10,18 -- s VCC = 360V, TJ = 125C VGE = 15V, RG = 10W , VCPK < 500V -- TJ = 150C, see figures 11,18 -- IC = 30A, VCC = 480V ns -- VGE = 15V, RG = 5.0W -- Energy losses include "tail" -- mJ and diode reverse recovery -- nH Measured 5mm from package -- VGE = 0V -- pF VCC = 30V see figure 7 -- = 1.0MHz 75 ns TJ = 25C see figure 160 TJ = 125C 14 IF = 25A 10 A TJ = 25C see figure 15 TJ = 125C 15 VR = 200V 375 nC TJ = 25C see figure 1200 TJ = 125C 16 di/dt 200A/s -- A/s TJ = 25C see figure -- TJ = 125C 17
2
www.irf.com
IRG4PC50KD
35
F or b oth:
30
LOAD CURRENT (A)
25
D uty c y c le : 50% T J = 12 5 C T sink = 90 C G a te d riv e a s s pe c ified
P ow er D is s ipation = 40 W S q u a re w a v e : 60% of rated voltage
I
20
15
10
Id e a l d io d es
5
0 0.1
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
1000
I C , Collector-to-Emitter Current (A)
100
TJ = 25 C
150C
I C , Collector-to-Emitter Current (A)
100
TJ = 150 C
TJ = 150 C
10
10
TJ = 25 C V CC = 50V 5s PULSE WIDTH
5 6 7 8 9 10 11 12
1 1
V GE = 15V 20s PULSE WIDTH
10
1
VCE , Collector-to-Emitter Voltage (V)
VGE , Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
www.irf.com
3
IRG4PC50KD
60
3.0
Maximum DC Collector Current(A)
50
VCE , Collector-to-Emitter Voltage(V)
VGE = 15V 80 us PULSE WIDTH IC = 60 A
40
30
2.0
IC = 30 A
20
IC = 15 A
10
0 25 50 75 100 125 150
1.0 -60 -40 -20
0
20
40
60
80 100 120 140 160
TC , Case Temperature ( C)
TJ , Junction Temperature ( C)
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature
1
Thermal Response (Z thJC )
0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t2 2. Peak T = PDM x Z thJC + TC J 0.0001 0.001 0.01 0.1 1
0.01
0.001 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
www.irf.com
IRG4PC50KD
5000 20
VGE , Gate-to-Emitter Voltage (V)
4000
VGE = Cies = Cres = Coes =
0V, f = 1MHz Cge + Cgc , Cce SHORTED Cgc Cce + Cgc
VCC = 400V I C = 30A
16
C, Capacitance (pF)
Cies
3000
12
2000
8
1000
4
Coes
0 1 10
Cres
100
0 0 40 80 120 160 200
VCE , Collector-to-Emitter Voltage (V)
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
4.5
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V CC = 480V V GE = 15V TJ = 25 C 4.0 I C = 30A
100
RG =5.0W Ohm VGE = 15V VCC = 480V IC = 60 A IC = 30 A IC = 15 A
10
3.5
3.0
1
2.5
2.0 0 10 20 30 40 50
0.1 -60 -40 -20
0
20
40
60
80 100 120 140 160
G RG, Gate Resistance (W) (O
)
TJ , Junction Temperature ( C )
Fig. 9 - Typical Switching Losses vs. Gate Resistance
www.irf.com
Fig. 10 - Typical Switching Losses vs. Junction Temperature
5
IRG4PC50KD
12
8
6
4
2
I C , Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
RG TJ VCC 10 VGE
= 5.0W Ohm = 150 C = 480V = 15V
1000
VGE = 20V T J = 125 o C
100
0 0 10 20 30 40 50 60 70
SAFE OPERATING AREA
10 1 10 100 1000
I C , Collector-to-emitter Current (A)
VCE , Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
100
Fig. 12 - Turn-Off SOA
In sta n ta n e o u s F o rw a rd C u rre n t - I F (A )
140
TJ = 150 C TJ = 125 C
10
120
V R = 200V T J = 125C T J = 25C
TJ = 25 C
100
t rr - (ns)
80
I F = 50A I F = 25A
60
IF = 10A
40
1 0.6 1.0 1.4 1.8 2.2 2.6
F o rw a rd V o lta g e D ro p - V FM (V )
20 100
di f /dt - (A/s)
1000
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6
Fig. 14 - Typical Reverse Recovery vs. dif/dt
www.irf.com
IRG4PC50KD
100 1500
VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C
1200
VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C
Q R R - (n C )
I IR R M - (A )
I F = 5 0A I F = 25A
10
900
I F = 50A
I F = 10A
600
I F = 2 5A
300
I F = 10A
1 100 1000 0 100
d i f /d t - (A / s)
d i f /d t - (A / s)
1000
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 16 - Typical Stored Charge vs. dif/dt
10000
VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C
d i(re c)M /d t - (A / s)
1000
I F = 10A
I F = 25A
I F = 50A
Mechanical drawings, Appendix A Test Circuit diagrams, Appendix B Switching Loss Waveforms, Appendix C
www.irf.com
100 100
1000
d i f /d t - (A / s)
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
7
IRG4PC50KD
Same type device as D .U.T.
90%
80% of Vce
430F D .U .T.
Vge
VC
10% 90%
t d(off)
10% IC 5%
tr t d(on)
tf t=5s Eon E ts = (Eon +Eoff ) Eoff
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
G A T E V O LT A G E D .U .T . 10% + V g +V g
trr Ic
Q rr =
trr id dt Ic dt tx
tx 10% V c c Vce 10% Ic 90% Ic D U T V O LT A G E AND CURRENT Ipk Ic
10% Irr Vcc
V pk Irr
Vcc
D IO D E R E C O V E R Y W AVEFORMS td(on) tr 5% V c e t2 E on = V c e ieIc dt Vce dt t1 t2 D IO D E R E V E R S E RECOVERY ENERG Y t3 t4
E rec =
Vd Ic dt
t4 V d id dt t3
t1
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr 8
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr www.irf.com
IRG4PC50KD
V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T .
V O LT A G E IN D .U .T .
C U R R E N T IN D 1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
L 1000V 50V 600 0 F 100 V Vc*
D.U.T.
RL= 0 - 800V
800V 4 X IC @25C
Figure 19. Clamped Inductive Load Test Circuit
Figure 20. Pulsed Collector Current Test Circuit
www.irf.com
9
IRG4PC50KD
Notes:
R p t t v r t n : VG E=20V; pulse width limited by maximum junction temperature eeiie aig ( i u e2 ) fgr 0 , . fgr 9 V C C=80%(VCES) VG E=20V, L=10H, RG = 5 0W ( i u e 1 ) P l e w d h 8 ; d t f c o 0 1 . us it 0s uy atr .% P l e w d h 5 0 s s n l s o . us it ., ige ht
Case Outline TO-247AC
3.65 (.14 3) 3.55 (.14 0) 0.25 (.01 0) M D B M -A5.50 (.217)
-D-
15 .90 (.62 6) 15 .30 (.60 2) -B-
5.30 (.209) 4.70 (.185) 2.50 (.089) 1.50 (.059) 4
NOTES: 1 D IM E N S IO N S & T O L E R A N C IN G P E R A N S I Y 14.5M , 1982. 2 C O N T R O LLIN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M ILL IM E T E R S (IN C H E S ). 4 C O N F O R M S T O JE D E C O U T L IN E T O -2 47A C .
20 .30 (.80 0) 19 .70 (.77 5) 1
2X
5.50 (.217) 4.50 (.177)
2
3
-C-
LE A D 1234-
A S S IG N M E N T S GATE C O LLE C T O R E M IT T E R C O LLE C T O R
*
14 .80 (.583) 14 .20 (.559)
4.3 0 (.1 70) 3.7 0 (.1 45)
0.80 (.03 1) 0.40 (.01 6) 2.60 (.10 2) 2.20 (.08 7)
*
3X C AS
2.40 (.09 4) 2.00 (.07 9) 2X 5.45 (.21 5)
LO N G E R L E A D E D (20m m ) V E R S IO N A V A ILA B LE (T O -247 A D ) T O O R D E R A D D "-E " S U F F IX TO PART NUMBER
3X
1.4 0 (.0 56) 1.0 0 (.0 39) 0.2 5 (.0 10) M
2X
3.40 (.13 3) 3.00 (.11 8)
CONFORM S TO JEDEC OU TLINE TO-247AC (TO-3P)
D im ensio ns in M illim ete rs a nd (In ch es)
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 12/98
10
www.irf.com

▲Up To Search▲

Price & Availability of IRG4PC50KD

	To Download IRG4PC50KD Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .